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| (R) BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED TO-220 3 1 2 s APPLICATIONS LAMP ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATION DESCRIPTION The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Storage Temperature Max. Operating Junction Temperature Value 900 400 7 5 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o C C February 2001 1/6 BUL903ED THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.8 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Base-Emitter Leakage Current Test Conditions V CE = 900 V V EB = 7 V I C = 10 mA L = 25 mH 400 Min. Typ. Max. 1 100 Unit mA A V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Parallel Diode Forward Voltage RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time Diode Reverse Recovery Time Avalanche Energy IC = 1 A I C = 0.1 A I C = 0.5 A I C = 2.0 A I C = 5 mA I C = 0.5 A IF = 3 A V CC = 125 V I B1 = 0.05 A t p = 300 s I B = 0.15 A I B = 0.05 A I B = 0.1 A I B = 0.4 A V CE = 10 V V CE = 3 V 8 20 1.0 1.0 1.1 1.2 V V V V h FE VF 1.2 I C = 0.7 A I B2 = 0.4 A V td tr ts tf td tr ts tf T RR E sb 0.2 1.0 0.8 0.25 0.2 0.5 0.8 0.5 300 6 s s s s s s s s ns mJ V CC = 125 V I B1 = 0.045 A t p = 300 s I C = 0.5 A I B2 = 0.5 A IF = 1 A V DD = 30 V L = 2 mH di/dt = 100 A/s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/6 BUL903ED Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 BUL903ED Reverse Biased SOA Resistive Load Switching Test Circuit Energy Rating Test Circuit 4/6 BUL903ED TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 BUL903ED Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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